2sd2170| Datasheet

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2SD2170
Transistors

Medium Power Transistor (Motor, Relay drive) (90 +20 , 2A) -10
2SD2170
Features 1) Built-in zener diode between collector and base. 2) Zener diode has low dispersion. 3) Strong protection against reverse power surges due to "L" loads. 4) Darlington connection for high DC current gain. 5) Built-in resistor between base and emitter. 6) Built-in damper diode. External dimensions (Unit : mm)
4.0 1.0 2.5 0.5

1.5 0.4

(1)

3.0

0.5

(3)

4.5

1.6

(2)

(1) Base (2) Collector (3) Emitter

1.5 0.4

ROHM : MPT3 EIAJ : SC-62

Absolute maximum ratings (Ta=25 C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 90 +20 -10 90 +20 -10 6 2 3 0.5 1 2 2 150 -55 to +150 Unit V V V A (DC) A (Pulse) W C C

Collector current Collector power dissipation Junction temperature Storage temperature

1 Single pulse Pw=10ms,Duty=1/2 2 When mounted on a 40 x 40 x 0.7 mm ceramic board.

Packaging specifications and hFE
Type Package hFE Marking Code Basic ordering unit (pieces) 2SD2170 MPT3 1k to 10k DM T100 1000

Equivalent circuit
C

B R1 E : Emitter B : Base C : Collector
R1 R2

R2 E 3.5k 300

Electrical characteristics (Ta=25 C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO ICBO IEBO VCE(sat) hFE fT Cob Min. 80 80 - - - 1000 - - Typ. - - - - - - 80 25 Max. 110 110 10 3 1.5 10000 - - Unit V V uA mA V - MHz pF IC=50uA IC=1mA VCB=70V VEB=5V IC/IB=1A/1mA VCE=2V , IC=1A VCE=5V , IE=-0.1A , f=30MHz VCB=10V , IE=0A , f=1MHz 1 1 2 Conditions

1 Measure using pulse current. 2 Transition frequency of the device.

0.4

1.5

Rev.A

1/2