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dtb113ek| Datasheet

By datasheet - March 7th, 2009

dtb113ek| Datasheet

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DTB113EK / DTB113ES
Transistors

-500mA / -50V Digital transistors (with built-in resistors)
DTB113EK / DTB113ES
Applications Inverter, Interface, Driver
Feature 1) Built-in bias resistors enable theconfiguration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on / off conditions need to be set for operation, making the device design easy. Structure PNP epitaxial planar silicon transistor (Resistor built-in type) Packaging specifications
Package Packaging type Code Basic ordering unit (pieces)
SMT3 SPT

External dimensions (Unit : mm)
DTB113EK
2.9 0.4
(3)

1.1 0.8

(2)

(1)

1.6 2.8

0.95 0.95
0.15

0.3Min.

1.9

ROHM : SMT3 EIAJ : SC-59

(1) GND (2) IN (3) OUT

Each lead has same dimension Abbreviated symbol : F11

DTB113ES
3.0

4.0

2.0

(15Min.)

Taping
T146 3000

Taping
TP 5000 -
ROHM : SPT EIAJ : SC-72
2.5 5.0
(1) (2) (3)

3Min.
0.45

0.5

0.45

(1) GND (2) OUT (3) IN

Part No. DTB113EK DTB113ES

Abbreviated symbol : B113ES

-

Absolute maximum ratings (Ta=25 C)
Parameter
Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature

Equivalent circuit
Limits
Unit
R1

Symbol VCC VIN IC PD Tj Tstg 200

DTB113EK DTB113ES -50 -10 to +10 -500 300 150 -55 to +150 V V mA mW C
IN
IN

OUT

R2

GND(+)

OUT GND(+)

C

R1=R2=1.0k

Rev.A

1/2


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