em6k1| Datasheet

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EM6K1
Transistor

2.5V Drive Nch+Nch MOS FET
EM6K1
Structure Silicon N-channel MOS FET External dimensions (Unit : mm)
EMT6
1.6 0.5

Features 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating mutual interference. 3) Mounting cost and area can be cut in half. 4) Low on-resistance. 5) Low voltage drive (2.5V) makes this device ideal for portable equipment.

1.0 0.5 0.5
(6) (5) (4)

1.6 1.2

1pin mark

(1) (2) (3)

0.22

0.13

Each lead has same dimensions Abbreviated symbol : K1

Applications Interfacing, switching (30V, 100mA)

Packaging specifications
Package Code Type EM6K1 Basic ordering unit (pieces) Taping T2R 8000

Equivalent circuit
(6) (5) Gate Protection Diode (4)

Tr1

Tr2 (1)Tr1 (2)Tr1 (3)Tr2 (4)Tr2 (5)Tr2 (6)Tr1 Source Gate Drain Source Gate Drain

(1)

Gate Protection Diode

(2)

(3)

Absolute maximum ratings (Ta=25 C)
Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Symbol VDSS VGSS ID IDP 1 PD
2

A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded.

Limits 30 20 100 400 150 120 150 -55 to +150

Unit V V mA mA mW / TOTAL mW / ELEMENT C C

Total power dissipation Channel temperature Storage temperature
1 Pw10us, Duty cycle1% 2 With each pin mounted on the recommended lands.

Tch Tstg

Rev.C

1/3

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em6k1 DATASHEET