r5016anj| Datasheet

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R5016ANJ
Transistors

10V Drive Nch MOSFET
R5016ANJ
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
LPTS
10.1 4.5 1.3

Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be 30V. 5) Drive circuits can be simple. 6) Parallel use is easy.

13.1 9.0

3.0

1.0

1.24

0.78
(3)

5.08

2.7

(1) Base (Gate) (2) Collector (Drain) (3) Emitter (Source)

(1)

(2)

Each lead has same dimensions

Applications Switching

Packaging specifications
Package Code Type Basic ordering unit (pieces) Taping TL 1000

Inner circuit

R5016ANJ

1

Absolute maximum ratings (Ta=25 C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Total power dissipation (Tc=25 C) Channel temperature Range of storage temperature
1 Pw10s, Duty cycle1% 2 L 500H, VDD=50V, RG=25, Starting, Tch=25 C 3 Limited only by maximum tempterature allowed

Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg
3 1 3 1 2 2

Limits 500 30 16 64 16 64 8 18 100 150 -55 to +150

Unit V V A A A A A mJ W C C
(1)
(1) Gate (2) Drain (3) Source

(2)

1.2

2.54

0.4

(3) 1 Body Diode

Thermal resistance
Parameter Channel to case Symbol Rth(ch-c) Limits 1.25 Unit C/W

1/3

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r5016anj DATASHEET