rb095t-40| Datasheet

By datasheet - March 7th, 2009

rb095t-40| Datasheet

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RB095T-40
Diodes

Schottky barrier diode
RB095T-40
Applications Switching power supply Dimensions (Unit : mm) Structure

Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability

Construction Silicon epitaxial planar

Absolute maximum ratings (Ta=25 C)

Parameter Limits Symbol VRM 45 Reverse voltage (repetitive peak) VR Reverse voltage (DC) 40 6 Average rectified forward current *1 Io IFSM 100 Forward current surge peak 60Hz 1cyc) (*1 Junction temperature 150 Tj Storage temperature -40 to +150 Tstg (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=136
Electrical characteristic (Ta=25 C)
Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR jc Min. Typ. Max. 0.55 0.1 3.00 Unit V mA /W

Unit V V A A

Conditions IF=3A VR=40V junction to case

Rev.D

1/3