rb160a30| Datasheet

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RB160A30
Diodes

Schottky barrier diode
RB160A30
Applications General rectification Dimensions (Unit : mm)
CATHODEBAND 0.6 0.1

Features 1) Cylindrical mold type. (MSR) 2) High I surge capability. 3) Low IR. 4) High ESD.

29 1

3.0 0.2

29 1 2.5 0.2

ROHM : MSR Manufacture Date

Construction Silicon epitaxial planar

Taping specifications (Unit : mm)
BROWN H2 A BLUE E
Symbol Standard dimension value(mm)

L1 H1 F

L2 D

T-31 52.4 1.5 +0.4 T-32 26.0 0 T-31 5.0 0.5 B T-31 5.0 0.3 T-31 C 1.0 max. T-32 T-31 D 0 T-32 T-31 1/2A 1.2 E T-32 1/2A 0.4 T-31 0.7 T-32 0.2 max. T-31 H1 6.0 0.5 T-32 T-31 H2 5.0 0.5 T-32 T-31 1.5 max. |L1-L2| T-32 0.4 max. H1(6mm)BROWN

Absolute maximum ratings (Ta=25 C)
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak t=100us Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 30 30 1 70 150 -55 to +150 Unit V V A A

(*1)Mounted on epoxy board. 180 Half sine wave

Electrical characteristics (Ta=25 C)
Parameter Forward voltagae Reverse current ESD break down voltage Symbol VF IR ESD Min. 0.33 20 Typ. 0.43 9.00 Max. 0.48 50 Unit V uA kV Conditions IF=1.0A VR=30V C=100pF,R=1.5k, forward and reverse : 1 time

Rev.B

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