rb548w| Datasheet

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RB548W
Diodes

Schottky barrier diode
RB548W
Application Low current rectification External dimensions (Unit : mm) Land size figure (Unit : mm)

Features 1) Ultra small mold type. (EMD3) 2) Low IR 3) High reliability.

Construction Silicon epitaxial planear

Structure

Taping dimensions (Unit : mm)

Absolute maximum ratings Ta=25 C Parameter Reverse voltage (DC) Average rectified forward current *1 Forward current surge peak 60Hz 1cyc Junction temperature Storage temperature (*1) Rating of per diode

*1

Symbol VR Io IFSM Tj Tstg

Limits 30 100 500 125 -40 to +125

Unit V mA mA

Electrical characteristics Ta=25 C Parameter Symbol VF Forward voltage Reverse current IR

Min. -

Typ. -

Max. 0.45 0.5

Unit V A

Conditions IF=10mA VR=10V

Rev.B

1/3

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rb548w DATASHEET