rb751s-40| Datasheet

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RB751S-40
Diodes

Schottky barrier diode
RB751S-40
Applications Low current rectification External dimensions (Unit : mm)
0.8 0.05 0.12 0.05

Land size figure
0.8 0.6

1.2 0.05

Features 1) Ultra small mold type. (EMD2) 2) Low VF 3) High reliability

1.6 0.1

EMD2

Construction Silicon epitaxial planar

0.3 0.05

Structure
0.6 0.1

ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory)

Taping specifications (Unit : mm)
0.2 0.05 4.0 0.1 2.0 0.05 1.5 0.05

3.5 0.05

1.75 0.1

8.0 0.15

1.3 0.06 0

1.26 0.05 0
0.2 0.76 0.05

2.45 0.1

0.5 0.95 0.06 0 Empty pocket 4.0 0.1 2.0 0.05

Absolute maximum ratings (Ta=25 C)
Param eter R evers e voltage (repetitive peak) R evers e voltage (DC) Average rectified forward current Forward current s urge peak 60Hz 1cyc J unction tem perature S torage tem perature Sym bol VRM VR Io IFSM Tj Ts tg Lim its 40 30 30 200 125 -40 to +125 Unit V V mA mA

Electrical characteristic (Ta=25 C)
Param eter Forward voltage Revers e current Capacitance between term ins ls Sym bol VF IR Ct Min. Typ. 2 Max. 0.37 0.5 Unit V uA pF IF =1m A VR =30V VR =1V , f=1MHz Conditions

0.6

Rev.B

1.7

1/3