rdx100n60| Datasheet

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RDX100N60
Transistors

10V Drive Nch MOS FET
RDX100N60
Structure Silicon N-channel MOS FET External dimensions (Unit : mm)
TO-220FM
10.0
3.2

4.5 2.8

14.0

Features 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity.
(1)Gate

15.0

12.0

8.0

2.5

1.3

1.2

0.8 2.54
(1) (2) (3)

2.54

0.75

2.6

Applications Switching

(2)Drain (3)Source

Packaging specifications
Package Type RDX100N60 Code Basic ordering unit (pieces) Bulk - 500

Inner circuit
1

(1)

(2)

(3)

1 GATE PROTECTION DIODE 2 BODY DIODE

(1) Gate (2) Drain (3) Source

Absolute maximum ratings (Ta=25 C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID 1 IDP 2 IS ISP 2 IAS 3 EAS 4 PD Tch Tstg Limits 600 30 10 40 10 40 10 230 45 150 -55 to +150 Unit V V A A A A A mJ W C C

Avalanche current Avalanche energy Total power dissipation (Tc=25 C) Channel temperature Range of storage temperature

1 Limited only by maximum temperature allowed 2 Pw 10us, Duty cycle 1% 4 L = 4.0mH VDD=90V Rg=25 startingTch=25 C 3 L = 4.0mH VDD=90V Rg=25

Thermal resistance
Parameter Channel to case Symbol Rth(ch-c) Limits
2.78

Unit C/W

1/2