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rpi-121| Datasheet

By datasheet - March 7th, 2009

rpi-121| Datasheet

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RPI-121
Photointerrupter, Ultraminiature type

External dimensions (Unit : mm)

3.6

Through hole

2.65

Input(LED)

Forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Operating temperature Storage temperature

IF VR PD VCEO VECO IC PC Topr Tstg

50 5 80 30 4.5 30 80 -25 to +85 -40 to +100

mA V mW V V mA mW

Optical control equipment Cameras Floppy disk drives

Gap

1 0.8 Cross-section A-A 0.4
C 0. 7

4- 0.8

(photo- ) transistor

Output

Features
1) Ultra-small. 2) Minimal influence from stray light. 3) Low collector-emitter saturation voltage.
3.3 1.5

A
Optical axis center (0.5)

C C

Electrical and optical characteristics (Ta=25 C)
Min.2

2.3

Parameter
Output Input charac- characteristics teristics Forward voltage Reverse current Dark current Peak sensitivity wavelength Collector current Collector-emitter saturation voltage Response time
Infrared light emitter diode

Symbol VF IR ICEO
P

Min.
- - - -

Typ. 1.3
- -

Max. 1.6 10 0.5 -
- -

Unit V uA uA nm mA mA V us
MHz nm us nm

Conditions IF = 50mA VR = 5V VCE = 10V
-

A

2-R0.1 2-R0.3 4-0.5

800
- - -

4-0.2 (2.65) (2)

4-0.4

IC1 IC2 VCE(sat) tr
fC

0.7 0.2
- - - -

VCE = 5V, IF = 20mA VCE = 5V, IF = 5m IF = 20mA, IC = 0.3mA VCC = 5V, IF = 20mA, RL =100
IF=50mA
Non-coherent Infrared light emitting diode used.

Transfer characteristics

0.3
- - - - -

tf

10
1 950 10 800

Anode

Collector

Cut-off frequency Peak light emitting wavelength Response time Maximum sensitivity wavelength

2
Cathode Emitter

Parameter

Symbol

Limits

Unit

Applications

2.6

Absolute maximum ratings (Ta=25 C)

P

Photo transistor

tr
P

tf

- -

VCC=5V, IC=1mA, RL=100

This product is not designed to be protected against electromagnetic wave.

-

Notes: 1. Unspecified tolerance shall be 0.2 . 2. Dimension in parenthesis are show for reference.

Electrical and optical characteristics curves
RELATIVE COLLECTOR CURRENT : IC (%) 125 FORWARD CURRENT : IF (mA) 50 40 30 20 10 0 FORWARD CURRENT : IF (mA) -25 C 0 C 25 C 50 C 75 C COLLECTOR CURRENT : IC (mA) 50 100
d

5

100 1000 RESPONSE TIME : tr (us)

4

DARK CURRENT : ICEO (nA)

40

100 VCE=30V VCE=20V VCE=10V

RL=1k 10 RL=500

75

3

30

10

50

20

2

1

RL=100

25

10 0 0.2

1

0.1 0 0 1 0.05 0.1 -25

0 0

0.5

1.0

1.5

2.0

2.5

-20

0

20

40

60

80

100

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

10

20

30

40

50

1

10

0

25

50

75

100

DISTANCE : d (mm)

AMBIENT TEMPERATURE : Ta ( C)

FORWARD VOLTAGE : VF (V)

FORWARD CURRENT : IF (mA)

COLLECTOR CURRENT : IC (mA)

AMBIENT TEMPERATURE : Ta ( C)

Fig.1 Relative output current vs. distance ( )
RELATIVE COLLECTOR CURRENT : IC (%) POWER DISSIPATION / COLLECTOR POWER DISSIPTION : PD/PC (mW) 125
d

Fig.2 Forward current falloff
RELATIVE COLLECTOR CURRENT : IC (%) 160

Fig.3 Forward current vs. forward voltage

Fig.7 Collector current vs. forward current
Input
COLLECTOR CURRENT : IC (mA) 10 IF=50mA 40mA 6 30mA 20mA

Fig.8 Response time vs. collector current

Fig.9 Dark current vs. ambient temperature

120 100 P D PC 80 60 40 20 0

VCC

140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100

100

8

75

Input Output
RL

90% 10%

50

4

Output
td tr td : Delay time tf

25

2

10mA

t r : Rise time (time for output current to rise from 0 0 2 4 6 8 10

0 0

0.5

1.0

1.5

2.0

2.5

-20

0

20

40

60

80

100

10% to 90% of peak current)
t f : Fall time (time for output current to fall from 90%

DISTANCE : d (mm)

AMBIENT TEMPERATURE : Ta ( C)

AMBIENT TEMPERATURE : Ta ( C)

COLLECTOR TO EMITTER VOLTAGE: VCE (V)

to 10% of peak current)

Fig.4 Relative output current vs. distance ( )

Fig.5 Power dissipation / collector power dissipation vs. ambient temperature

Fig.6 Relative output vs. ambient temperature

Fig.10 Output characteristics

Fig.11 Response time measurement circuit


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