sp8k5| Datasheet

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SP8K5
Transistors

4V Drive Nch+Nch MOSFET
SP8K5
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
SOP8
5.0 0.4
(8) (5)

1.75

Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small surface Mount Package (SOP8).
1pin mark

(1)

(4)

3.9 6.0

1.27

0.2

Application Power switching, DC / DC converter.

Each lead has same dimensions Abbreviated symbol : SP8K5

Packaging specifications
Package Type SP8K5 Code Basic ordering unit (pieces) Taping TB 2500

Equivalent circuit
(8) (7) (6) (5) (8) (7) (6) (5)

2

2

(1) (2) (3) (4)
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain

1

1

(1)

(2)

(3)

(4)

1 ESD PROTECTION DIODE 2 BODY DIODE

Absolute maximum ratings (Ta=25 C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Storage temperature
1 Pw 10us, Duty cycle 1% 2 MOUNTED ON A CERAMIC BOARD.

A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.

Continuous Pulsed Continuous Pulsed

Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD 2 Tch Tstg

Limits 30 20 3.5 14 1.6 6.4 2 150 -55 to +150

Unit V V A A A A W C C

Thermal resistance
Parameter Channel to ambient
MOUNTED ON A CERAMIC BOARD.

Symbol Rth (ch-a)

Limits 62.5

Unit C / W

0.4Min.

Rev.B

1/3

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sp8k5 DATASHEET