um5k1n| Datasheet

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

UM5K1N
Transistors

2.5V Drive Nch+Nch MOS FET
UM5K1N
Structure Silicon N-channel MOS FET External dimensions (Unit : mm)
UMT5
2.0 1.3 0.9 0.7

Features 1) Two 2SK3018 transistors in a single UMT package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance. 4) Low voltage drive (2.5V) makes this device ideal for portable equipment. 5) Drive circuits can be simple.

0.65 0.65

(5) (4)

1.25
1pin mark
(1) (2) (3)

2.1

0.2

0.15

Each lead has same dimensions
Abbreviated symbol : K1

Applications Interfacing, switching (30V, 100mA)

Packaging specifications
Package Type Code Basic ordering unit (pieces) UM5K1N Taping TR 3000

Equivalent circui
(6) (4)

Tr1

0.1Min.

Tr2

Absolute maximum ratings (Ta=25 C)
Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Total power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID IDP1 PD2 Tch Tstg Limits 30 20 100 400 150 120 150 -55 to +150 Unit V V mA mA mW / TOTAL mW / ELEMENT C C

Gate Protection Diode (1) (1) Tr1 Gate (2) Source (3) Tr2 Gate (4) Tr2 Drain (6) Tr1 Drain (2)

Gate Protection Diode (3)

A protection diode has been built in between
the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltagesare exceeded.

1 Pw10us, Duty cycle50% 2 With each pin mounted on the recommended lands.
Thermal resistance
Parameter Channel to ambient
With each pin mounted on the recommended lands.

Symbol Rth(ch-a)

Limits
833 1042

Unit C / W / TOTAL C / W / ELEMENT

Rev.A

1/3