2STA1962| Datasheet

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2STA1962
High power PNP epitaxial planar bipolar transistor
Features

High breakdown voltage VCEO > -230V Complementary to 2STC5242 Fast-switching speed Typical fT = 30 MHz
3 2 1

Application

Audio power amplifier
TO-3P

Description
This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

Figure 1.

Internal schematic diagram

Table 1.

Device summary
Order code 2STA1962 Marking 2STA1962 Package TO-3P Packaging Tube

December 2007

Rev 2

1/9
www.st.com 9

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2STA1962 DATASHEET