2STA2120| Datasheet

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2STA2120
High power PNP epitaxial planar bipolar transistor
Preliminary data

Features

High breakdown voltage VCEO = 250 V Complementary to 2STC5948 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC
3 2 1

Applications

Audio power amplifier

TO-3P

Description
The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram

Table 1.

Device summary
Marking 2STA2120 Package TO-3P Packaging Tube

Order code 2STA2120

November 2007

Rev 1

1/7
www.st.com 7

This is preliminary information on a new product in developement or undergoing evaluation. Detail are subject to change without notice.

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2STA2120 DATASHEET