2STC4467| Datasheet

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2STC4467
High power NPN epitaxial planar bipolar transistor
Preliminary data

Features

High breakdown voltage VCEO =120V Complementary to 2STA1694 Fast-switching speed Typical ft =20MHz Fully characterized at 125 oC
3 2 1

Applications

Audio power amplifier

TO-3P

Description
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram

Table 1.

Device summary
Marking 2STC4467 Package TO-3P Packaging Tube

Order code 2STC4467

November 2007

Rev 1

1/7
www.st.com 7

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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2STC4467 DATASHEET