2STC4468| Datasheet

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2STC4468
High power NPN epitaxial planar bipolar transistor

General features

Preliminary data

High breakdown voltage VCEO=140V Complementary to 2STA1695 Fast-switching speed Typical ft =20MHz Fully characterized at 125 oC
3 2 1

Applications

Audio power amplifier

TO-3P

Description
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70W to 100W high fidelity audio frequency amplifier output stage.

Internal schematic diagram

Order codes
Part Number 2STC4468 Marking 2STC4468 Package TO-3P Packaging Tube

Electrical ratings

June 2007

Rev 1

1/9
www.st.com 9

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.