2STC5200| Datasheet

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2STC5200
High power NPN epitaxial planar bipolar transistor
Features

High breakdown voltage VCEO > 230V Complementary to 2STA1943 Fast-switching speed Typical fT = 30 MHz
3

Application

Audio power amplifier

1

2

TO-264

Description
This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

Figure 1.

Internal schematic diagram

Table 1.

Device summary
Order code 2STC5200 Marking 2STC5200 Package TO-264 Packaging Tube

December 2007

Rev 2

1/9
www.st.com 9

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2STC5200 DATASHEET