2STC5949| Datasheet
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2STC5949
High power NPN epitaxial planar bipolar transistor
Preliminary data
Features
High breakdown voltage VCEO = 250 V Complementary to 2STA2121 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC
Applications
Audio power amplifier
TO-264
Description
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking 2STC5949 Package TO-264 Packaging Tube
Order code 2STC5949
November 2007
Rev 1
1/7
www.st.com 7
This is preliminary information on a new product in developement or undergoing evaluation. Detail are subject to change without notice.

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