2STR1160| Datasheet
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2STR1160
Low voltage fast-switching NPN power transistor
Features
Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface mounting circuits
Description
The device in a NPN transistor manufactured using new "PB-HCD" (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. The complementary PNP is the 2STR2160.
SOT-23
Figure 1.
Internal schematic diagram
Applications
LED Battery charger Motor and relay driver Voltage regulation
Table 1.
Device summary
Marking 160 Package SOT-23 Packing Tape and reel
Order code 2STR1160
February 2008
Rev 1
1/11
www.st.com 11

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