2STR1160| Datasheet

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2STR1160
Low voltage fast-switching NPN power transistor
Features

Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface mounting circuits

Description
The device in a NPN transistor manufactured using new "PB-HCD" (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. The complementary PNP is the 2STR2160.

SOT-23

Figure 1.

Internal schematic diagram

Applications

LED Battery charger Motor and relay driver Voltage regulation

Table 1.

Device summary
Marking 160 Package SOT-23 Packing Tape and reel

Order code 2STR1160

February 2008

Rev 1

1/11
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