2STW1693| Datasheet

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2STW1693
High power PNP epitaxial planar bipolar transistor
Features

High breakdown voltage VCEO = -80V Complementary to 2STW4466 Typical ft = 20MHz Fully characterized at 125 oC

Applications

3 2 1

Audio power amplifier TO-247

Description
The device is a PNP transistor manufactured in low voltage planar technology using base island layout. The resulting transistor shows good gain linearity coupled with low VCESAT behaviour. Recommended for 40W to 70W high fidelity audio frequency amplifier output stage. Figure 1.

Internal schematic diagram

Table 1.

Device summary
Marking 2STW1693 Package TO-247 Packaging Tube

Order code 2STW1693

October 2007

Rev 1

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