2STW4466| Datasheet

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2STW4466
High power NPN epitaxial planar bipolar transistor
Features

High breakdown voltage VCEO = 80V Complementary to 2STW1693 Typical ft = 20MHz Fully characterized at 150 oC

Applications

3 2 1

Audio power amplifier TO-247

Description
The device is a NPN transistor manufactured in low voltage planar technology using base island layout. The resulting transistor shows good gain linearity coupled with low VCESAT behaviour. Recommended for 45W to 70W high fidelity audio frequency amplifier output stage. Figure 1.

Internal schematic diagram

Table 1.

Device summary
Marking 2STW4466 Package TO-247 Packaging Tube

Order code
2STW4466

October 2007

Rev 1

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