2STW4468| Datasheet

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2STW4468
High power NPN epitaxial planar bipolar transistor

General features

High breakdown voltage VCEO=140V Complementary to 2STW1695 Fast-switching speed Typical ft =20MHz Fully characterized at 125 oC In compliance with the 2002/93/EC European Directive TO-247
3 2 1

Applications

Audio power amplifier

Description
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70W to 100W high fidelity audio frequency amplifier output stage.

Internal schematic diagram

Order codes
Part Number 2STW4468 Marking 2STW4468 Package TO-247 Packing Tube

February 2007

Rev 3

1/9
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