BUL128D-B| Datasheet

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BUL128D-B
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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STMicroelectronics PREFERRED SALES TYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE

Figure 1: Package

APPLICATIONS n ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING n FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. Table 1: Order Codes
Part Number BUL128D-B Marking BUL128D-B

TO-220

Figure 2: Internal Schematic Diagram

Package TO-220

Packaging Tube

Table 2: Absolute Maximum Ratings
Symbol VCES VCEO VEBO IC ICM IB IBM Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC= 0, IB = 2 A, tp < 10 us, TJ = 150 oC) Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 5ms) Value 700 400 V(BR)EBO 4 8 2 4 Rev. 2 Unit V V V A A A A 1/8

February 2005