BUL138FP| Datasheet

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BUL138FP
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING TO-220FP

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APPLICATIONS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The BUL138FP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P tot V isol T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to Exernal Heatsink Storage Temperature Max. Operating Junction Temperature Value 800 400 9 5 10 2 4 33 1500 -65 to 150 150 Unit V V V A A A A W V
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September 2003

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