BUL312FP| Datasheet

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BUL312FP
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC LARGE RBSOA FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING
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APPLICATIONS HORIZONTAL DEFLECTION FOR TV s SMPS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING
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TO-220FP

DESCRIPTION The BUL312FP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P tot Visol T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p <5 ms) Base Current Base Peak Current (t p <5 ms) Total Dissipation at Tc = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature Value 1150 500 9 5 10 3 4 36 1500 -65 to 150 150 Unit V V V A A A A W V
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March 2004

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