BUL805| Datasheet

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BUL805
High voltage fast-switching NPN Power Transistor
Data Brief

General features

NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed In compliance with the 2002/93/EC European Directive
TO-220
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Description
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds. The device is designed for use as PFC in high frequency ballast half Bridge voltage fed topology.

Internal schematic diagram

Applications

Electronic ballast for fluorescent lighting Dedicated for PFC solution in half-bridge voltage fed topology.

Order codes
Part Number BUL805 Marking BUL805 Package TO-220 Packing Tube

May 2006

Rev 1

1/7
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For further information contact your local STMicroelectronics sales office.