BULB128| Datasheet

BULB128, BULB128-1

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BULB128-1
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Ordering Code BULB128-1
s

Marking BULB128

Shipment Tube

s s s s

s s

STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED THROUGH HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX "-1")

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APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.

I2PAK (TO-262) (Suffix "-1")

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 700 400 9 4 8 2 4 70 -65 to 150 150 Unit V V V A A A A W
o o

C C

September 2003

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