BULD742C, BULD742CT4
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BULD742C
High voltage fast-switching NPN power transistor
Features
Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed
1 3
Applications
Electronic ballast for fluorescent lighting Switch mode power supplies
DPAK
Description
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking BULD742C Package DPAK Packaging Tape & reel
Order code BULD742CT4
August 2007
Rev 1
1/12
www.st.com 12

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