BUT11A| Datasheet

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BUT11A
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED

APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The BUT11A is a silicon Multiepitaxial Mesa NPN transistor in Jedec TO-220 plastic package, particularly intended for switching application.
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TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0 V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Power Dissipation at T c 25 o C Storage Temperature Max. Operating Junction Temperature Value 1000 450 9 5 10 2 4 83 -65 to 150 150 Unit V V V A A A A W o C o C

March 2004

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