BUT30V| Datasheet

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BUT30V
NPN TRANSISTOR POWER MODULE

s s s s

NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE
Pin 4 not connected

APPLICATIONS: MOTOR CONTROL s SMPS & UPS s WELDING EQUIPMENT
s

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol V CEV V CEO(sus) V EBO IC I CM IB I BM P tot V isol T stg Tj Parameter Collector-Emitter Voltage (V BE = -5 V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p = 10 ms) Base Current Base Peak Current (t p = 10 ms) Total Dissipation at T c = 25 o C Insulation Withstand Voltage (RMS) from All Four Terminals to External Heatsink Storage Temperature Max. Operating Junction Temperature Value 200 125 7 100 150 20 30 250 2500 -55 to 150 150 Unit V V V A A A A W

o o

C C

February 2003

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