BUT90| Datasheet

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BUT90
HIGH POWER NPN SILICON TRANSISTOR

s s s s s

NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS LOW COLLECTOR EMITTER SATURATION

APPLICATIONS UNINTERRUPTABLE POWER SUPPLY s MOTOR CONTROL s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
s

1 2
TO-3 (version "S")

DESCRIPTION The BUT90 is a Multiepitaxial Planar NPN Transistor in TO-3 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol V CEV V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = -1.5 V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p = 10 ms) Base Current Base Peak Current Storage Temperature Max Operating Junction Temperature (t p = 10 ms)
o

Value 200 125 10 50 120 12 32 250 -65 to 200 200

Unit V V V A A A A W
o o

Total Power Dissipation at T case 25 C

C C

February 2003

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BUT90 DATASHEET