BUV20| Datasheet

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BUV20
HIGH CURRENT NPN SILICON TRANSISTOR

s s s s

STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS

APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s SWITCHING REGULATORS
s

1 2
TO-3 (version "S")

DESCRIPTION The BUV20 is silicon Multiepitaxial Planar NPN transistor mounted in jedec TO-3 metal case. It is intended for use in switching and linear applications in military and industrial equipment.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CER V CEX V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (R BE = 100) Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Power Dissipation at T case 25 o C Storage Temperature Junction Temperature Value 160 150 160 125 7 50 60 10 250 -65 to 200 200 Unit V V V V V A A A W
o o

C C

January 2000

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