BUV26| Datasheet

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BUV26
MEDIUM POWER NPN SILICON TRANSISTOR

s s s

STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED LOW COLLECTOR EMITTER SATURATION

APPLICATIONS SWITCHING REGULATORS s MOTOR CONTROL
s

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DESCRIPTION The BUV26 is a Multiepitaxial Planar NPN Transistor in TO-220 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control.

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB I BM P tot P tot T stg Tj Parameter Collector-base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Emitter Current Collector Peak Current (t p <10ms) Base Current Base Peak Current (t p <10ms) Total Dissipation at T c < 25 o C Total Dissipation at T c < 60 o C Storage Temperature Max. Operating Junction Temperature Value 180 90 7 14 25 4 6 85 65 -65 to +175 175 Unit V V V A A A A W W
o o

C C

February 2003

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