BUV298AV| Datasheet

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BUV298AV
NPN TRANSISTOR POWER MODULE

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HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS INSULATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

INDUSTRIAL APPLICATIONS: MOTOR CONTROL s SMPS & UPS s WELDING EQUIPMENT
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Pin 4 not connected

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol V CEV V EBO IC I CM IB I BM P tot T stg Tj V ISO Parameter Collector-Emitter Voltage (V BE = -5 V) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p = 10 ms) Base Current Base Peak Current (t p = 10 ms) Total Dissipation at T C = 25 o C Storage Temperature Max. Operating Junction Temperature Insulation Withstand Voltage (AC-RMS) Value 1000 450 7 50 75 10 16 250 -55 to 150 150 2500 Unit V V V A A A A W
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V CEO(sus) Collector-Emitter Voltage (I B = 0)

C C C 1/7

October 2001