BUV46| Datasheet

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BUV46
HIGH VOLTAGE NPN POWER TRANSISTOR

s s

STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION FAST SWITCHING SPEED

APPLICATIONS GENERAL PURPOSE SWITCHING s SWITCH MODE POWER SUPPLIES s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING
s

3 1 2

TO-220

DESCRIPTION The device is a Multiepitaxial Mesa NPN transistor mounted in TO-220 plastic package. It is intended for high voltage and fast switching applications. INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEX V CEO VEBO IC IB P tot Tstg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (VBE = -2.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T C = 25 C Storage Temperature Max. Operating Junction Temperature
o

Value 850 850 400 7 5 3 70 -65 to 150 150

Unit V V V V A A W
o o

C C

February 2002

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