BUV61| Datasheet

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BUV61
HIGH POWER NPN SILICON TRANSISTOR

s s s s

NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERIZED AT 125oC

APPLICATION s SWITCHING REGULATORS s MOTOR CONTROL DESCRIPTION The BUV61 is a Multi-Epitaxial planar NPN transistor in TO-3 metal case. It is intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment.

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TO-3 (version " S ")

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol V CEV V CEO V EBO IC I CM IB I BM P Base P tot T stg Tj Parameter Collector-emitter Voltage (V BE = -1.5V) Collector-emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Base Peak Current Reverse Bias Base Dissipation (B.E. junction in avalanche) Total Power Dissipation at T case < 25 o C Storage Temperature Max Operating Junction Temperature Value 300 200 7 50 75 8 15 2 250 -65 to 200 200 Unit V V V A A A A W W
o o

C C

October 2003

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