DB-55025-540| Datasheet

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DB-55025-540
RF power amplifier using 1 x PD55025 N-channel enhancement-mode lateral MOSFETs
Features

Excellent thermal stability Frequency: 460 - 540MHz Supply voltage: 13.6V Output power: 20W Gain: 12.5 0.5dB Efficiency: 51% - 66% Load mismatch: 20:1 BeO free amplifier In compliance with the 2002/95/EC european directive
Mechanical specification: L = 70 mm, W = 30 mm

Description
The DB-55025-540 is a common source N-channel Enhancement-Mode Lateral Field Effect RF power amplifer designed for UHF mobile radio applications.

Order code

DB-55025-540

July 2007

Rev 2

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