M54HC00| Datasheet

M54HC00, M54HC00D, M54HC00D1, M54HC00K, M54HC00K1

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M54HC00
RAD-HARD QUAD 2-INPUT NAND GATE
s

s s

HIGH SPEED: tPD = 8ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 1uA(MAX.) at TA=25 C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN) BALANCED PROPAGATION DELAYS: tPLH tPHL WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH 54 SERIES 00 SPACE GRADE-1: ESA SCC QUALIFIED 50 krad QUALIFIED, 100 krad AVAILABLE ON REQUEST NO SEL UNDER HIGH LET HEAVY IONS IRRADIATION DEVICE FULLY COMPLIANT WITH SCC-9201-105

DILC-14

FPC-14

ORDER CODES
PACKAGE DILC FPC FM M54HC00D M54HC00K EM M54HC00D1 M54HC00K1

The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge and transient excess voltage.

DESCRIPTION The M54HC00 is an high speed CMOS QUAD 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology.

PIN CONNECTION

DILC-14 March 2004

FPC-14 1/8