M54HC03| Datasheet

M54HC03, M54HC03D, M54HC03K

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M54HC03
RAD-HARD QUAD 2-INPUT OPEN DRAIN NAND GATE
s

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HIGH SPEED: tPD = 8ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 1uA(MAX.) at TA=25 C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) BALANCED PROPAGATION DELAYS: tPLH tPHL WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH 54 SERIES 03 SPACE GRADE-1: ESA SCC QUALIFIED 50 krad QUALIFIED, 100 krad AVAILABLE ON REQUEST NO SEL UNDER HIGH LET HEAVY IONS IRRADIATION DEVICE FULLY COMPLIANT WITH SCC-9201-114

DILC-14

FPC-14

ORDER CODES
PACKAGE DILC FPC FM M54HC03D M54HC03K EM M54HC03D1 M54HC03K1

DESCRIPTION The M54HC03 is an high speed CMOS QUAD 2-INPUT OPEN DRAIN NAND GATE fabricated with silicon gate C2MOS technology.

The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. This device can, with an external pull-up resistor, be used in wired AND configuration. This device can be also used as a led driver and in any other application requiring a current sink. All inputs are equipped with protection circuits against static discharge and transient excess voltage.

PIN CONNECTION

March 2004

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