M54HC10| Datasheet

M54HC10, M54HC10D, M54HC10D1, M54HC10K

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

M54HC10
RAD-HARD TRIPLE 3-INPUT NAND GATE
s

s s

HIGH SPEED: tPD = 8ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 1uA(MAX.) at TA=25 C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN) BALANCED PROPAGATION DELAYS: tPLH tPHL WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH 54 SERIES 10 SPACE GRADE-1: ESA SCC QUALIFIED 50 krad QUALIFIED, 100 krad AVAILABLE ON REQUEST NO SEL UNDER HIGH LET HEAVY IONS IRRADIATION DEVICE FULLY COMPLIANT WITH SCC-9201-107

DILC-14

FPC-14

ORDER CODES
PACKAGE DILC FPC FM M54HC10D M54HC10K EM M54HC10D1 M54HC10K1

The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge and transient excess voltage.

DESCRIPTION The M54HC10 is an high speed CMOS TRIPLE 3-INPUT NAND GATE fabricated with silicon gate C2MOS technology.

PIN CONNECTION

March 2004

1/8