M54HC20| Datasheet

M54HC20, M54HC20D

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M54HC20
RAD-HARD DUAL 4-INPUT NAND GATE
s

s s

HIGH SPEED: tPD = 9ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 1uA(MAX.) at TA=25 C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN) at VCC = 4.5V BALANCED PROPAGATION DELAYS: tPLH tPHL WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH 54 SERIES 20 SPACE GRADE-1: ESA SCC QUALIFIED 50 krad QUALIFIED, 100 krad AVAILABLE ON REQUEST NO SEL UNDER HIGH LET HEAVY IONS IRRADIATION DEVICE FULLY COMPLIANT WITH SCC-9201-118

DILC-14

FPC-14

ORDER CODES
PACKAGE DILC FPC FM M54HC20D M54HC20K EM M54HC20D1 M54HC20K1

The internal circuit is composed of 3-stage including buffered output, which gives high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge and transient excess voltage.

DESCRIPTION The M54HC20 is an high speed CMOS DUAL 4-INPUT NAND GATE fabricated with silicon gate C2MOS technology.

PIN CONNECTION

April 2004

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