M58PR001LE| Datasheet

M58PR001LE, M58PR512LE

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M58PR512LE M58PR001LE
512-Mbit or 1-Gbit ( 16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories
Data Brief

Features

Supply voltage VDD = 1.7 V to 2.0 V for program, erase and read VDDQ = 1.7 V to 2.0 V for I/O Buffers VPP = 9 V for fast program Synchronous / Asynchronous Read Synchronous Burst Read mode: 108 MHz, 66 MHz Asynchronous Page Read mode Random Access: 96 ns Programming time 4.2 us typical Word program time using Buffer Enhanced Factory Program command Memory organization Multiple Bank memory array: 64 Mbit Banks (512 Mb devices) 128 Mbit Banks (1 Gb devices) Four Extended Flash Array (EFA) Blocks of 64 Kbits Dual operations program/erase in one Bank while read in others No delay between read and write operations Block locking All Blocks locked at power-up Any combination of Blocks can be locked with zero latency WP for Block Lock-Down Absolute Write Protection with VPP = VSS The M58PRxxxLE memories are only available as part of a multi-chip package device.

Not packaged separately

Security 64 bit unique device number 2112 bit user programmable OTP Cells Common Flash Interface (CFI) 100 000 program/erase cycles per block Electronic signature Manufacturer Code: 20h 512 Mbit device: 8819h 1 Gbit device: 880Fh

19 January 2007

Rev 1

1/7
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