M58WR016KL70ZA6E| Datasheet

M58WR016KL70ZA6E, M58WR032KL, M58WR032KL70ZA6E, M58WR032KL70ZA6F, M58WR032KU, M58WR032KU70ZA6U, m58wr016kl

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M58WR016KU M58WR016KL M58WR032KU M58WR032KL
16- or 32-Mbit ( 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories
Data Brief

Features

Supply voltage VDD = 1.7 V to 2 V for Program, Erase and Read VDDQ = 1.7 V to 2 V for I/O buffers VPP = 9 V for fast Program Multiplexed address/data Synchronous / Asynchronous Read Synchronous Burst Read mode: 86 MHz Random access: 60 ns, 70 ns Synchronous Burst Read Suspend Programming time 10 us by word typical for Factory Program Double/Quadruple Word Program option Enhanced Factory Program options Memory blocks Multiple Bank memory array: 4 Mbit Banks Parameter Blocks (top or bottom location) Dual operations Program Erase in one Bank while Read in others No delay between Read and Write operations Block locking All blocks locked at Power up Any combination of blocks can be locked WP for Block Lock-Down Security 128 bit user programmable OTP cells 64 bit unique device number Common Flash Interface (CFI) 100 000 program/erase cycles per block

FBGA

VFBGA44 (ZA) 7.5 5 mm

Electronic signature Manufacturer Code: 20h Top device code, M58WR016KU: 8823h M58WR032KU: 8828h Bottom device code, M58WR016KL: 8824h M58WR032KL: 8829h ECOPACK packages available

January 2007

Rev 1

1/10
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