STB11NM60| Datasheet

STB11NM60, STB11NM60-1, STB11NM60T4, STP11NM60, STP11NM60FP

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STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1
N-channel 650V @ TJmax - 0.4 - 11A TO-220/FP/D2PAK/I2PAK MDmeshTM Power MOSFET
General features
Type STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1

VDSS (@TJ=TJmax) 650V 650V 650V 650V

RDS(on) <0.45 <0.45 <0.45 <0.45

ID
3

11A 11A 11A 11A TO-220

3 1 2

TO-220FP

High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
1

3 12

D2PAK

i2PAK

Description
The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.

Internal schematic diagram

Applications

Switching application

Order codes
Part number STB11NM60T4 STB11NM60-1 STP11NM60 STP11NM60FP Marking B11NM60 B11NM60-1 P11NM60 P11NM60FP Package D PAK I PAK TO-220 TO-220FP Packaging Tape & reel Tube Tube Tube

January 2007

Rev 6

1/16
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