STB11NM65N| Datasheet

STB11NM65N, STF11NM65N, STI11NM65N, STP11NM65N, STW11NM65N

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STB11NM65N - STF11NM65N STI11NM65N-STP11NM65N-STW11NM65N
N-channel 650V - 0.33 - 12A - TO-220/FP- D2/I2PAK - TO-247 Second generation MDmeshTM Power MOSFET
Features
Type STI11NM65N STB11NM65N STF11NM65N STP11NM65N STW11NM65N VDSS (@TJmax) 710 V 710 V 710 V 710 V 710 V RDS(on) Max < 0.38 < 0.38 < 0.38 < 0.38 < 0.38 ID
3

12 A 12 A 12 A(1) 12 A 12 A

3 12

TO-220
3 1

I PAK

D PAK
3

1. Limited only by maximum temperature allowed

2 1

100% avalanche tested Low input capacitance and gate charge Low gate input resistance

TO-247

TO-220FP

Figure 1.

Internal schematic diagram

Application

Switching applications

Description
This series of devices is designed using the second generation of MDmeshTM Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Table 1.

Device summary
Part number STI11NM65N Marking 11NM65N 11NM65N 11NM65N 11NM65N 11NM65N Package I PAK D PAK TO-220FP TO-220 TO-247 Packaging Tube Tape & reel Tube Tube Tube

STB11NM65N STF11NM65N STP11NM65N STW11NM65N

October 2007

Rev 2

1/18
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