STB11NM80| Datasheet

STB11NM80, STB11NM80T4, STF11NM80, STP11NM80, STW11NM80

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STB11NM80 - STF11NM80 STP11NM80 - STW11NM80
N-channel 800 V - 0.35 - 11 A - TO-220/FP- D2PAK - TO-247 MDmeshTM Power MOSFET
Features
Type STB11NM80 STF11NM80 STP11NM80 VDSS 800 V 800 V 800 V RDS(on) < 0.40 < 0.40 < 0.40 < 0.40 RDS(on)*Qg 14*nC 14*nC 14*nC 14*nC ID 11 A 11 A 11 A 11 A
3 1

TO-247

D PAK

STW11NM80 800 V

Low input capacitance and gate charge Low gate input resistance Best RDS(on) *Qg in the industry
3 1 2

3 1 2

TO-220

TO-220FP

Application

Switching applications

Figure 1.

Internal schematic diagram

Description
The MDmeshTM associates the multiple drain process with the Company's PowerMeshTM horizontal layout assuring an outstanding low onresistance. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.

Table 1.

Device summary
Marking B11NM80 F11NM80 P11NM80 W11NM80 Package D PAK TO-220FP TO-220 TO-247 Packaging Tape & reel Tube Tube Tube

Order codes STB11NM80 STF11NM80 STP11NM80 STW11NM80

December 2007

Rev 9

1/17
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