STB12NM60N, STB12NM60N-1, STF12NM60N, STP12NM60N, STW12NM60N
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STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N
N-channel 600V - 0.35 - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmeshTM Power MOSFET
Features
Type STB12NM60N STB12NM60N-1 STF12NM60N STP12NM60N STW12NM60N VDSS (@Tjmax) 650V 650V 650V 650V 650V RDS(on) < 0.41 < 0.41 < 0.41 < 0.41 < 0.41 ID
1 3
3 12
10A 10A 10A(1) 10A 10A
D PAK
I PAK
TO-247
3 1 2
3 1 2
1. Limited only by maximum temperature allowed
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
TO-220
TO-220FP
Internal schematic diagram Description
This series of devices implements second generation MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Application
Switching application
Order codes
Part number STB12NM60N STB12NM60N-1 STF12NM60N STP12NM60N STW12NM60N Marking B12NM60N B12NM60N F12NM60N P12NM60N W12NM60N Package D PAK I PAK TO-220FP TO-220 TO-247 Packaging Tape & reel Tube Tube Tube Tube
April 2007
Rev 2
1/18
www.st.com 18
STB12NM60N Datasheet st Download PDF
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