STB13007DT4| Datasheet

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STB13007DT4
High voltage fast-switching NPN power transistor
General features

Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range High voltage capability Integrated free-wheeling diode Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Fully characterized at 125 C Large RBSOA In compliance with the 2002/93/EC European Directive
D2PAK (T0-263)
1 3

Internal schematic diagram

Description
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure to enhance switching speeds.

Applications

Electronic transformers for halogen lamps Switch mode power supplies

Order codes
Part Number STB13007DT4 Marking B13007D Package D 2PAK Packing Tape & Reel

April 2007

Rev 2

1/9
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