STB14NM65N| Datasheet

STB14NM65N, STF14NM65N, STI14NM65N, STP14NM65N, STW14NM65N

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STB14NM65N - STF14NM65N STI14NM65N-STP14NM65N-STW14NM65N
N-channel 650 V - 0.33 - 12 A - TO-220/FP- D2/I2PAK - TO-247 second generation MDmeshTM Power MOSFET
Features
Type STI14NM65N STB14NM65N STF14NM65N STP14NM65N STW14NM65N VDSS (@TJmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.38 < 0.38 < 0.38 < 0.38 < 0.38 ID
3

12 A 12 A 12 A(1) 12 A 12 A

3 12

TO-220
3 1

I PAK

D PAK
3

1. Limited only by maximum temperature allowed

2 1

100% avalanche tested Low input capacitance and gate charge Low gate input resistance

TO-247

TO-220FP

Figure 1.

Internal schematic diagram

Application

Switching applications

Description
This series of devices is designed using the second generation of MDmeshTM Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Table 1.

Device summary
Order codes STI14NM65N Marking 14NM65N 14NM65N 14NM65N 14NM65N 14NM65N Package I PAK D PAK TO-220FP TO-220 TO-247 Packaging Tube Tape and reel Tube Tube Tube

STB14NM65N STF14NM65N STP14NM65N STW14NM65N

February 2008

Rev 1

1/19
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