STB15NM65N| Datasheet

STB15NM65N, STF15NM65N, STI15NM65N, STP15NM65N, STW15NM65N

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STF15NM65N-STI15NM65N-STW15NM65N STB15NM65N-STP15NM65N
N-channel 650V - 0.25 - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmeshTM Power MOSFET
Features
Type STB15NM65N STF15NM65N STI15NM65N STP15NM65N STW15NM65N VDSS RDS(on) Max (@Tjmax) 710 V 710 V 710 V 710 V 710 V < 0.27 < 0.27 < 0.27 < 0.27 < 0.27 ID
3

15.5 A 15.5 A(1) 15.5 A 15.5 A 15.5 A

1

2

3 12

TO-220
3 1 2

I PAK

TO-220FP
3 1
2 3

1. Limited only by maximum temperature allowed

100% avalanche tested Low input capacitance and gate charge Low gate input resistance

D PAK

1

TO-247

Figure 1.

Internal schematic diagram

Application

Switching applications

Description
This series of devices implements the second generation of MDmeshTM Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters

Table 1.

Device summary
Order codes STI15NM65N Marking 15NM65N 15NM65N 15NM65N 15NM65N 15NM65N Package I PAK TO-220FP TO-220 D PAK TO-247 Packaging Tube Tube Tube Tape & reel Tube

STF15NM65N STP15NM65N STB15NM65NT4 STW15NM65N

September 2007

Rev 1

1/18
www.st.com 18


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